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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM8596-15 PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HIGH POWER P1dB=42.0dBm at 8.5GHz to 9.6GHz n HIGH GAIN G1dB=7.0dB at 8.5GHz to 9.6GHz n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel Temperature Rise SYMBOL P1dB G1dB IDS VDS= 9V f = 8.5 - 9.6GHz CONDITION UNIT dBm dB A % VDSxIDSxRth(c-c) C MIN. 41.0 6.0 TYP. MAX. 42.0 7.0 4.5 31 5.5 100 add Tch ELECTRICAL CHARACTERISTICS ( Ta= 25 C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO CONDITION VDS= 2V IDS= 4.8A VDS= 2V IDS= 145mA VDS= 3V VGS= 0V IGS= -145 A UNIT mS V A V C/W MIN. -1.5 -5 TYP. 3000 -3.0 10.0 2.0 MAX. -4.5 11.5 2.5 Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jun. 2002 TIM8596-15 ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 11.5 60 175 -65 +175 PACKAGE OUTLINE (2-11C1B) 2.0 MIN. Unit in mm 4-R3.0 * 0.60.15 17.00.3 21.5 MAX. . +0.1 -0.05 11.0 MAX. 0.1 2.0 MIN. 12.90.2 3.20.3 * Gate Source Drain 0.2 MAX. HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.70.3 2.60.3 5.0 MAX. |
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